maximum ratings: (t c =25c) tip140 tip141 TIP142 symbol tip145 tip146 tip147 units collector-base voltage v cbo 60 80 100 v collector-emitter voltage v ceo 60 80 100 v emitter-base voltage v ebo 5.0 v continuous collector current i c 10 a peak collector current i cm 20 a base current i b 0.5 a power dissipation p d 125 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 1.0 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =rated v cbo 1.0 ma i ceo v ce = 1 / 2 rated v ceo 2.0 ma i ebo v eb =5.0v 2.0 ma bv ceo i c =30ma (tip140, tip145) 60 v bv ceo i c =30ma (tip141, tip146) 80 v bv ceo i c =30ma (TIP142, tip147) 100 v v ce(sat) i c =5.0a, i b =10ma 2.0 v v ce(sat) i c =10a, i b =40ma 3.0 v v be(on) v ce =4.0v, i c =10a 3.0 v v f i f =10a 2.8 v h fe v ce =4.0v, i c =5.0a 1000 h fe v ce =4.0v, i c =10a 500 t on i c =10a, i b1 =i b2 =40ma, r l =3.0 0.9 s t off i c =10a, i b1 =i b2 =40ma, r l =3.0 4.0 s tip140 tip141 TIP142 npn tip145 tip146 tip147 pnp silicon power darlington complementary transistors to-218 transistor case central semiconductor corp. tm r2 (1-august 2008) description: the central semiconductor tip140, tip145 series types are complementary silicon power darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching applications where high gain is required. marking: full part number
central semiconductor corp. tm to-218 transistor case - mechanical outline tip140 tip141 TIP142 npn tip145 tip146 tip147 pnp silicon power darlington complementary transistors r2 (1-august 2008) lead code: 1) base 2) collector 3) emitter note: tab is common to lead 2. marking: full part number
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